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Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V TO270-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：960MHz
- Gain：18.5dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：600 mA
- Power - Output：80W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-270AB
- Supplier Device Package：TO-270 WB-4
- Configuration：-
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Overview
The MRF5S9080NR1 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 869 MHz and 960 MHz. It delivers 80 Watts CW output power at 26 Volts with a drain efficiency of 60% and power gain of 18.5 dB. For GSM EDGE, it provides 36 Watts average output power with 42% efficiency and 2.5% rms EVM. The device features internal input matching, integrated ESD protection, and qualified operation up to 32 VDD.
Feature Summary
- Internally matched on the input side to simplify circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Qualified for continuous operation up to 32 Vdc drain voltage
Applications
- GSM base station amplifiers
- GSM EDGE base station amplifiers
- TDMA amplifier applications
- Multicarrier amplifier applications
Procurement Notes
Verify the specific package variant required, as the datasheet covers both TO-270 WB-4 (MRF5S9080NR1) and TO-272 WB-4 (MRF5S9080NBR1). Confirm RoHS compliance status and check for updated documentation revisions from NXP or Freescale Semiconductor before finalizing procurement specifications.
Selection Notes
Select this component for high-power RF linear amplification in the 900 MHz band. Ensure thermal management supports the specified junction temperature limits. Verify that the application requires the specific internal input matching characteristics provided by this lateral MOSFET architecture.
Part Context
This part belongs to the MRF5S series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now part of NXP USA Inc. These devices are engineered specifically for cellular infrastructure, offering robust performance in demanding wireless communication environments requiring high linearity and power density.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference electrical parameters such as breakdown voltage, frequency range, and thermal resistance when evaluating alternative components.
