MRF5S9150HR5

Overview

The MRF5S9150HR5 is an N-channel enhancement-mode lateral MOSFET designed for N-CDMA base station applications operating between 869 and 960 MHz. It features a CASE 465A-06 (NI-780S) package with a maximum drain-source voltage of 68 Vdc and a junction temperature rating of 200 °C. At 880 MHz, it delivers 33 W average output power with 19.7 dB gain and 28.4% efficiency at 28 Vdc. The device supports 10:1 VSWR handling at 150 W CW output.

Feature Summary

• Internally matched input impedance to simplify circuit design
• Integrated electrostatic discharge protection mechanisms
• Qualified for operation up to a maximum of 32 Vdc drain supply
• Low thermal resistance package construction

Applications

• N-CDMA base station amplifiers
• Multicarrier amplifier applications
• Single-carrier N-CDMA signal processing

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging configuration. The R3 suffix indicates tape and reel delivery containing 250 units on a 56 mm reel. Ensure compatibility with the NI-780S case style and lead specifications before procurement.

Selection Notes

Select this component for broadband N-CDMA implementations requiring high linearity and robust VSWR tolerance. Evaluate thermal management requirements based on the specified junction-to-case resistance values under continuous wave and pulsed conditions.

Part Context

This part belongs to Freescale Semiconductor's RF Power Field Effect Transistors portfolio. It utilizes lateral N-channel technology optimized for cellular communication infrastructure. The device is characterized using series equivalent large-signal impedance parameters for accurate modeling.

Replacement Considerations

MRF5S9150HSR3

FAQ

What is the typical adjacent channel power ratio performance?

At 880 MHz with 33 W average output power, the ACPR is typically -46.8 dBc measured in a 30 kHz bandwidth at a ±750 kHz offset.

How does the device handle mismatched loads?

The transistor is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) when operating at 28 Vdc and 880 MHz with 150 Watts of continuous wave output power.

What are the gate threshold voltage limits?

The gate threshold voltage ranges from a minimum of 2 Vdc to a maximum of 4 Vdc, measured at a drain-source voltage of 10 Vdc and a drain current of 600 μAdc.