MRF6P23190HR5

Overview

The MRF6P23190HR5 is an RF MOSFET LDMOS device manufactured by NXP USA Inc. It operates at a test voltage of 28 V with a drain current of 1.9 A. The component functions at a frequency of 2.39 GHz, providing a gain of 14 dB and an output power of 40 W. It features a rated voltage of 68 V and utilizes the NI-1230 package for base mounting.

Feature Summary

• Lateral Double-diffused Metal-Oxide Semiconductor (LDMOS) technology
• Designed for radio frequency applications
• Base mount installation type

Applications

• Radio frequency power amplification
• Broadband communication systems

Procurement Notes

Verify the exact suffix against official documentation to confirm package and tape specifications. Confirm RoHS compliance status and environmental classifications prior to integration. Check manufacturer notices for product discontinuation or lifecycle changes. Ensure thermal management solutions align with the NI-1230 base mount requirements. Validate supply chain authenticity through authorized channels.

Selection Notes

Select this component for high-frequency RF power stages requiring specific voltage and current characteristics. Consider the NI-1230 package constraints for mechanical integration. Evaluate thermal dissipation needs based on the 40 W output capability. Verify compatibility with 28 V supply rails and 2.39 GHz operational bandwidths in the target circuit design.

Part Context

This part belongs to the MRF6 series of RF power transistors from NXP USA Inc. These devices are engineered for commercial and industrial broadband applications. The series typically supports frequencies ranging from hundreds of MHz to several GHz. They are commonly utilized in broadcast and communication infrastructure equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available.