MRF6S18100NBR1

MRF6S18100NBR1

$48.34
  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-

SKU:ea01a33c6051 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.99GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:100W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:-

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MRF6S18100NBR1

Overview

The MRF6S18100NBR1 is an N-channel enhancement-mode lateral MOSFET designed for cellular radio applications. It operates in the PCS/cellular frequency band, specifically optimized for base station power amplification. The device utilizes a TO-270 package and supports Class AB operation for multicarrier amplifier configurations.

Feature Summary

  • Enhancement-mode lateral MOSFET technology
  • Optimized for PCS/cellular radio base stations
  • Suitable for TDMA and CDMA multicarrier applications

Applications

  • PCS/cellular radio base stations
  • TDMA amplifier applications
  • CDMA amplifier applications
  • Multicarrier amplifier systems

Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with current design requirements. Confirm that the component meets all necessary regulatory standards for the intended deployment region. Cross-reference the manufacturer's archive documentation to validate technical specifications against original design parameters.

Selection Notes

Select this component for high-power RF amplification in wireless communication infrastructure. Ensure the thermal management solution accommodates the device's power dissipation characteristics. Verify impedance matching networks are designed for the specified operating frequency range to maximize efficiency and linearity.

Part Context

This part belongs to the MRF6S series of RF power LDMOS transistors from Freescale Semiconductor. These devices are engineered for robust performance in demanding wireless communication environments. The series provides reliable solutions for base station power amplification needs across various cellular standards.

Replacement Considerations

Consult official replacement lists for equivalent parts within the MRF6S family. Verify pinout compatibility and electrical parameter alignment before substitution.

MRF6S18100NBR1MRF6S18100NBR1
$48.34
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