MRF6S18100NR1

Overview

The MRF6S18100NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1805 MHz and 1990 MHz. It delivers 100 Watts output power at 28 Volts with a typical gain of 14.5 dB and drain efficiency of 49%. For GSM EDGE, it provides 40 Watts average power with 15 dB gain and 35% efficiency. The device features integrated ESD protection, internal matching, and qualified operation up to 32 Vdc.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Qualified for continuous operation at maximum voltage ratings up to 32 Vdc
• Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

• GSM base station amplifier stages
• GSM EDGE base station amplifier stages
• TDMA radio frequency power amplification
• Multicarrier amplifier applications

Procurement Notes

Verify the specific package style required for the application, as the NR1 suffix corresponds to the TO-270WB-4 case outline. Confirm that the component meets RoHS compliance standards if mandated by the project specifications. Ensure the procurement channel sources from authorized distributors to guarantee authenticity and traceability of the semiconductor material.

Selection Notes

Select this component for high-power linear amplification in cellular infrastructure requiring robust thermal performance. The device supports junction temperatures up to 225°C, allowing for higher power density designs compared to standard plastic packages. Evaluate the internal matching against external network requirements to optimize system footprint and insertion loss within the target frequency band.

Part Context

This part belongs to the MRF6S18100N series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. The series targets the 1800 MHz to 2000 MHz spectrum for wireless communication infrastructure. The NR1 variant specifically denotes the tape and reel packaging configuration suitable for automated surface-mount assembly processes.

Replacement Considerations

MRF6S18100NBR1

FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 225°C.

Does the MRF6S18100NR1 include internal matching networks?

Yes, the device is internally matched on both the input and output ports.

Is the device capable of handling high VSWR conditions?

Yes, it is capable of handling 5:1 VSWR at 28 Vdc and 100 Watts CW output power.