MRF6S19060NBR1

$40.58

Description：RF MOSFET LDMOS 28V TO272-4
Series：-

SKU:5711f8d3ccc9 Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V TO272-4
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：1.93GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：610 mA
Power - Output：12W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：TO-272BB
Supplier Device Package：TO-272 WB-4
Configuration：-

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MRF6S19060NBR1

Overview

The MRF6S19060NBR1 is an N-channel enhancement-mode lateral MOSFET designed for PCS/cellular radio and WLL applications. It operates within the L-band frequency range of 1930 to 1990 MHz. The device utilizes a TO-270 (CASE 1486-03) flatpack package with two pins and a source-connected case. Key electrical parameters include a minimum drain-source breakdown voltage of 68 V. It is characterized for use in Class AB amplifier configurations.

Feature Summary

Enhancement-mode lateral MOSFET technology optimized for RF power amplification
Designed specifically for dual-carrier N-CDMA performance requirements
Suitable for multicarrier amplifier applications in cellular base stations

Applications

N-CDMA base station applications
PCS/cellular radio systems
Wireless Local Loop (WLL) applications

Procurement Notes

Verify the specific suffix 'BR1' against official NXP documentation to confirm tape-and-reel packaging specifications, as standard datasheets may list generic variants. Ensure the component meets RoHS compliance standards indicated by the e3 designation. Confirm the manufacturer origin is NXP Semiconductor, formerly Freescale, to guarantee authenticity and traceability for production integration.

Selection Notes

Select this component for designs requiring L-band operation between 1930 and 1990 MHz. It is appropriate for Class AB linear amplifier topologies. The 68 V breakdown voltage supports standard 28 V supply rails common in wireless infrastructure. Verify thermal management requirements for the TO-270 package to ensure stable operation under specified average output power conditions.

Part Context

This part belongs to the MRF6S series of RF power transistors manufactured by NXP (formerly Freescale). These devices are engineered for high-efficiency amplification in commercial wireless communication infrastructure. The series typically features robust lateral DMOS construction suitable for demanding RF environments.