MRF6S19060NR1

$40.58

Description：RF MOSFET LDMOS 28V TO270-4
Series：-

SKU:4e4fcae3defc Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V TO270-4
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：1.93GHz ~ 1.9GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：610 mA
Power - Output：12W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270AB
Supplier Device Package：TO-270 WB-4
Configuration：-

Download product information

MRF6S19060NR1

Overview

The MRF6S19060NR1 is an N-channel enhancement-mode lateral MOSFET designed for base station applications in the L-band frequency range of 1930 to 1990 MHz. It operates with a minimum drain-source breakdown voltage of 68 V and utilizes a TO-270 (CASE 1486-03) flatpack package. The device is optimized for Class AB operation in multicarrier amplifier configurations, delivering typical performance metrics such as 12 Watts average output power at 1930 MHz under specific bias conditions.

Feature Summary

Engineered specifically for N-CDMA base station architectures within the 1930 to 1990 MHz spectrum.
Capable of supporting TDMA, CDMA, and multicarrier amplifier topologies suitable for PCS/cellular radio systems.
Constructed as an N-channel enhancement-mode lateral MOSFET with source-connected case for thermal efficiency.

Applications

N-CDMA base station amplifiers
PCS/cellular radio transmitters
Wireless Local Loop (WLL) applications

Procurement Notes

Verify component authenticity through authorized NXP Semiconductor channels due to end-of-life status. Confirm package integrity for the TO-270 form factor and ensure compliance with RoHS standards. Review technical documentation for any design-in updates or replacement recommendations prior to final procurement decisions.

Selection Notes

Select this component for designs requiring L-band RF power amplification in cellular infrastructure. Ensure the circuit supports Class AB biasing and operates within the specified 1930–1990 MHz band. Verify that the system can accommodate the 68 V minimum breakdown voltage and thermal requirements associated with the TO-270 package.

Part Context

This part belongs to the Freescale Semiconductor (now NXP) MRF series of RF power MOSFETs. These devices are widely utilized in wireless communication infrastructure. The MRF6S19060NR1 variant specifically targets high-linearity requirements for code division multiple access networks.