MRF6S19140HSR3

Description：RF MOSFET LDMOS 28V NI880S
Series：-

SKU:9e5738c70ae0 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI880S
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：1.93GHz ~ 1.99GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.15 A
Power - Output：29W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：NI-880S
Supplier Device Package：NI-880S
Configuration：-

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MRF6S19140HSR3

Overview

The MRF6S19140HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for PCN and PCS base station applications operating between 1930 MHz and 1990 MHz. It delivers 29 Watts average output power at 28 Volts with a typical gain of 16 dB and drain efficiency of 27.5%. The device supports Class AB operation for TDMA, CDMA, and multicarrier amplifiers, featuring internal matching and ESD protection.

Feature Summary

Optimized for Doherty amplifier configurations
Internally matched input and output circuits
Integrated electrostatic discharge protection
Qualified for up to 32 Vdc drain operation

Applications

PCN and PCS cellular base stations
TDMA and CDMA radio amplifiers
Wireless Local Loop (WLL) systems
Multicarrier amplifier designs

Procurement Notes

Verify the specific suffix HSR3 indicates tape and reel packaging containing 250 units on a 56 mm reel. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Ensure design compatibility with NI-880S surface mount footprints.

Selection Notes

Select this component for broadband wireless infrastructure requiring high linearity and power density in the PCS band. Evaluate thermal management requirements based on junction-to-case resistance values provided in the datasheet. Verify system impedance matching networks align with the specified series equivalent large-signal parameters.

Part Context

This part belongs to the MRF6S family of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. The device utilizes silicon technology optimized for high-efficiency linear amplification in demanding cellular communication environments.