MRF6S19200HSR3

Overview

The MRF6S19200HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C operation for PCN-PCS/cellular radio applications. Typical single-carrier W-CDMA performance at VDD = 28 Volts, IDQ = 1600 mA, and Pout = 56 Watts Avg. includes a power gain of 17.9 dB, drain efficiency of 29.5%, and ACPR of -36 dBc. The device handles 10:1 VSWR at 32 Vdc with 130 Watts CW output power.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output networks
• Integrated electrostatic discharge (ESD) protection
• Extended negative gate-source voltage range for improved Class C operation

Applications

• CDMA base station amplifiers
• Multicarrier amplifier applications
• PCN-PCS cellular radio systems

Procurement Notes

Verify the specific package variant against the datasheet; the HSR3 suffix corresponds to the NI-780S tape and reel format containing 250 units per 56 mm, 13-inch reel. Confirm RoHS compliance status and ensure the ordering suffix matches the required physical dimensions and pinout style for your PCB layout.

Selection Notes

Select this component when designing broadband RF power stages requiring high linearity and internal matching. Ensure thermal management accommodates the junction-to-case resistance values provided in the datasheet. Validate impedance parameters using large-signal load-pull data for optimal power transfer and efficiency across the specified frequency band.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF6S19200H series manufactured by Freescale Semiconductor. It utilizes the NI-780S surface-mount package. The device is characterized by series equivalent large-signal impedance parameters and is production tested for guaranteed output power capability under standard test conditions.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers before implementation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

How does the device handle high Voltage Standing Wave Ratio (VSWR)?

It is capable of handling 10:1 VSWR at 32 Vdc and 1960 MHz with 130 Watts CW output power.

What is the typical adjacent channel power ratio (ACPR)?

The typical ACPR is -36 dBc measured in a 3.84 MHz channel bandwidth at ±5 MHz offset.