MRF6S19200HSR5

Overview

The MRF6S19200HSR3 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C operation for PCN-PCS/cellular radio amplifiers. The device delivers 56 Watts average output power under single-carrier W-CDMA conditions at 28 Volts drain supply with 1600 mA quiescent current. It features integrated ESD protection, internal matching, and optimized performance for Doherty configurations.

Feature Summary

• Optimized for Doherty amplifier applications
• Integrated electrostatic discharge (ESD) protection
• Internally matched input and output networks
• Extended negative gate-source voltage range

Applications

• CDMA base station amplifiers
• PCN-PCS cellular radio applications
• Multicarrier amplifier designs

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. The HS designation indicates a surface mount package variant. Confirm RoHS compliance status through manufacturer certificates. Ensure the ordering code matches the required reel quantity specifications provided in the datasheet.

Selection Notes

Select this component for high-power RF applications requiring wide bandwidth coverage from 1930 to 1990 MHz. Evaluate thermal management requirements based on junction-to-case resistance values. Consider the device's capability to handle high VSWR conditions during system design. Validate impedance parameters for optimal matching network integration.

Part Context

This part belongs to the MRF6 series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. The NI-780S package provides a standardized footprint for mounting. The device represents a specialized solution for telecommunications infrastructure requiring robust linearity and efficiency.

Replacement Considerations

MRF6S19200HR3