MRF6S21060NBR1

MRF6S21060NBR1

$30.79
  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-

SKU:8090b302f304 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO272-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.12GHz
  • Gain:15.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:610 mA
  • Power - Output:14W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:-

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MRF6S21060NBR1

Overview

The MRF6S21060NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 14 Watts average output power at 28 Volts with a typical gain of 15.5 dB and drain efficiency of 26%. The device features internal matching, ESD protection, and qualified operation up to 32 Vdc. It supports TD-SCDMA and multicarrier amplifier applications in Class AB configurations.

Feature Summary

  • Internally matched input and output networks for simplified circuit design
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for operation up to a maximum drain voltage of 32 Vdc
  • Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

  • W-CDMA base station amplifiers
  • TD-SCDMA cellular radio systems
  • Multicarrier amplifier applications
  • PCS/cellular radio transmitters

Procurement Notes

Verify the specific suffix 'B' indicates lead-free terminations compliant with RoHS standards. Confirm package type matches TO-272 WB-4 plastic housing. Check manufacturer lifecycle status as this component may be subject to end-of-life restrictions or lifetime buy programs.

Selection Notes

Select this component for broadband RF power amplification requiring high linearity in W-CDMA environments. Ensure thermal management accommodates junction temperatures up to 225°C. Validate impedance matching networks against the provided series equivalent large-signal impedance parameters for optimal performance.

Part Context

This part belongs to the MRF6S family of lateral N-channel RF power MOSFETs originally developed by Freescale Semiconductor. The technology focuses on delivering high power density and efficiency in plastic packages suitable for surface mount assembly in telecommunications infrastructure.

Replacement Considerations

MRF6S21060NR1

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) is rated from -0.5 to +68 Vdc.

Is the device internally matched?

Yes, the MRF6S21060NBR1 is internally matched on both the input and output ports to ease system integration.

What is the typical power gain at 14 Watts average output?

The typical Power Gain (Gps) is 15.5 dB when operating at 14 Watts average output power with a 28V supply.

MRF6S21060NBR1MRF6S21060NBR1
$30.79
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