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The MRF6S21060NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 14 Watts average output power at 28 Volts with a typical gain of 15.5 dB and drain efficiency of 26%. The device features internal matching, ESD protection, and qualified operation up to 32 Vdc. It supports TD-SCDMA and multicarrier amplifier applications in Class AB configurations.
Verify the specific suffix 'B' indicates lead-free terminations compliant with RoHS standards. Confirm package type matches TO-272 WB-4 plastic housing. Check manufacturer lifecycle status as this component may be subject to end-of-life restrictions or lifetime buy programs.
Select this component for broadband RF power amplification requiring high linearity in W-CDMA environments. Ensure thermal management accommodates junction temperatures up to 225°C. Validate impedance matching networks against the provided series equivalent large-signal impedance parameters for optimal performance.
This part belongs to the MRF6S family of lateral N-channel RF power MOSFETs originally developed by Freescale Semiconductor. The technology focuses on delivering high power density and efficiency in plastic packages suitable for surface mount assembly in telecommunications infrastructure.
MRF6S21060NR1
The absolute maximum Drain-Source Voltage (VDSS) is rated from -0.5 to +68 Vdc.
Yes, the MRF6S21060NBR1 is internally matched on both the input and output ports to ease system integration.
The typical Power Gain (Gps) is 15.5 dB when operating at 14 Watts average output power with a 28V supply.