MRF6S21100HR3

Overview

The MRF6S21100HR3 is an RF Power Field Effect Transistor manufactured by Freescale Semiconductor. It is a lateral N-channel device designed for CDMA applications. The component utilizes semiconductor technology and is housed in a specific package configuration suitable for high-frequency operations.

Feature Summary

• Lateral N-channel architecture optimized for RF power amplification
• Designed specifically for CDMA communication systems
• High-frequency operational capability

Applications

• CDMA base station power amplifiers
• RF signal generation circuits
• Wireless communication infrastructure

Procurement Notes

Verify the manufacturer part number against official Freescale or NXP documentation to ensure authenticity. Confirm that the component matches the specified lateral N-channel RF MOSFET type. Check for any specific ordering suffixes that may indicate package variations or environmental compliance status, as these details are critical for compatibility with existing designs.

Selection Notes

Select this component for applications requiring robust RF performance in CDMA environments. Ensure the design accommodates the specific thermal and electrical requirements of lateral N-channel RF power FETs. Verify that the operating frequency range aligns with the device's intended use case for wireless communications.

Part Context

This part belongs to the family of RF Power Field Effect Transistors from Freescale Semiconductor. Similar models in this category include the MRF6S21140HR3 and MRF21060LR3, which share the lateral N-channel technology but may differ in specific power ratings or frequency optimizations for different cellular standards.