MRF6S21100NR1

MRF6S21100NR1

$48.72
  • Description:RF MOSFET LDMOS 28V TO270-4
  • Series:-

SKU:2120a7de9856 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO270-4
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.05 A
  • Power - Output:23W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF6S21100NR1

Overview

The MRF6S21100NR1 is an RF MOSFET LDMOS device manufactured by NXP USA Inc. It operates within the frequency range of 2.11GHz to 2.16GHz with a typical gain of 14.5dB. The component features a rated voltage of 68V and a test voltage of 28V, delivering an output power of 23W at a test current of 1.05A. Packaged in a TO-270 WB-4 surface mount configuration, this part is currently discontinued.

Feature Summary

  • Utilizes Lateral Double-Diffused Metal-Oxide-Semiconductor (LDMOS) technology for high-frequency performance.
  • Designed specifically for base station applications in the cellular radio spectrum.
  • Capable of handling multicarrier amplifier requirements with high linearity.

Applications

  • N-CDMA base station amplifiers
  • TDMA cellular radio systems
  • Wireless Local Loop (WLL) applications

Procurement Notes

Verify component authenticity through authorized channels as the MRF6S21100NR1 is officially discontinued by the manufacturer. Confirm RoHS3 compliance status and check for any Product Change Notices or obsolescence alerts prior to integration into new designs. Ensure storage conditions adhere to the specified Moisture Sensitivity Level 3 rating to prevent package damage during soldering processes.

Selection Notes

Select this component only for legacy system maintenance or replacement scenarios where the original design specifications require exact electrical matching. Evaluate thermal management requirements carefully due to the 23W output power capability in a compact surface-mount package. Consider alternative active devices if long-term supply stability is required for new product development projects.

Part Context

This device belongs to the MRF6 series of RF power field effect transistors originally developed by Freescale Semiconductor, which was later acquired by NXP. These lateral N-channel enhancement-mode MOSFETs are engineered for robust performance in wireless communication infrastructure, providing reliable signal amplification in demanding environmental conditions.

Replacement Considerations

No public confirmed substitute part numbers are available for this discontinued component. Designers must evaluate pin-compatible alternatives from other manufacturers or redesign the circuit to accommodate different package footprints and electrical characteristics.

MRF6S21100NR1MRF6S21100NR1
$48.72
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