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The MRF6S21100NR1 is an RF MOSFET LDMOS device manufactured by NXP USA Inc. It operates within the frequency range of 2.11GHz to 2.16GHz with a typical gain of 14.5dB. The component features a rated voltage of 68V and a test voltage of 28V, delivering an output power of 23W at a test current of 1.05A. Packaged in a TO-270 WB-4 surface mount configuration, this part is currently discontinued.
Verify component authenticity through authorized channels as the MRF6S21100NR1 is officially discontinued by the manufacturer. Confirm RoHS3 compliance status and check for any Product Change Notices or obsolescence alerts prior to integration into new designs. Ensure storage conditions adhere to the specified Moisture Sensitivity Level 3 rating to prevent package damage during soldering processes.
Select this component only for legacy system maintenance or replacement scenarios where the original design specifications require exact electrical matching. Evaluate thermal management requirements carefully due to the 23W output power capability in a compact surface-mount package. Consider alternative active devices if long-term supply stability is required for new product development projects.
This device belongs to the MRF6 series of RF power field effect transistors originally developed by Freescale Semiconductor, which was later acquired by NXP. These lateral N-channel enhancement-mode MOSFETs are engineered for robust performance in wireless communication infrastructure, providing reliable signal amplification in demanding environmental conditions.
No public confirmed substitute part numbers are available for this discontinued component. Designers must evaluate pin-compatible alternatives from other manufacturers or redesign the circuit to accommodate different package footprints and electrical characteristics.