MRF6S21190HR3

Overview

The MRF6S21190HR3 is an RF power MOSFET utilizing LDMOS technology, designed for base station applications in the S-band. It operates within a frequency range of 2110 to 2170 MHz and delivers an average output power of 54 W. The device features a gain of 16 dB and is housed in a robust NI-880 ceramic package. Rated at 28 V with a maximum drain-source voltage of 66 V, it supports efficient amplification for multicarrier systems.

Feature Summary

• Utilizes LDMOS technology for high-performance RF power amplification
• Internal impedance matching simplifies circuit design integration
• Robust air-cavity ceramic packaging ensures thermal reliability
• Compliant with RoHS standards for environmental safety

Applications

• W-CDMA base station amplifier modules
• TDMA system power amplification
• Multicarrier amplifier applications

Procurement Notes

Verify the specific suffix 'R3' against the manufacturer's official documentation to confirm compliance with current environmental directives and lead time requirements. Ensure the NI-880 package variant matches the intended PCB footprint and thermal management strategy. Cross-reference the part number with the latest datasheet revisions to confirm availability status and any potential obsolescence notices from Freescale Semiconductor or NXP.

Selection Notes

Select this component for S-band applications requiring 54 W average power output between 2110 and 2170 MHz. The internal matching network reduces external component count, simplifying the design process for W-CDMA and TDMA systems. Consider the NI-880 package for its thermal performance and mechanical stability in high-reliability base station environments where 16 dB gain is sufficient for the application architecture.

Part Context

This device belongs to the MRF6 series of RF power field-effect transistors manufactured by Freescale Semiconductor. The series focuses on providing high-efficiency solutions for wireless communication infrastructure. The MRF6S21190HR3 specifically targets the 2100 MHz band, offering a balance of power density and linearity suitable for modern cellular network base stations.

Replacement Considerations

Consult official substitution lists for direct replacements. No public substitute part numbers are confirmed in the provided data.