MRF6S23140HR3

Overview

The MRF6S23140HR3 is an N-channel LDMOS RF power transistor manufactured by NXP USA Inc. It operates at a frequency of 2.39 GHz with a gain of 15.2 dB. The device delivers 28 W of output power when tested at 28 V and 1.3 A. It features a drain-source breakdown voltage of 68 V and is housed in the NI-880H-2L package.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF performance
• Designed for base station applications requiring robust power output
• Constructed with a ceramic metal-sealed cofired package for thermal stability

Applications

• Base station power amplification
• S-band radio frequency signal generation
• Wireless communication infrastructure

Procurement Notes

Verify component authenticity through authorized distributors as this part is marked as obsolete. Confirm RoHS compliance status and check for available surplus stock from certified suppliers. Ensure the specific NI-880H-2L package variant matches design requirements before procurement.

Selection Notes

Select this component for S-band applications requiring 28 W output at 2.39 GHz. Consider the 68 V breakdown voltage and 28 V operating condition for bias circuit design. Evaluate the NI-880H-2L footprint against existing board layouts due to its flange mount configuration.

Part Context

This device belongs to the MRF6 series of RF power transistors designed for cellular base station sectors. It represents a legacy product line from Freescale Semiconductor, now managed by NXP USA Inc., focusing on high-efficiency power amplification in the S-band spectrum.

Replacement Considerations

Public confirmed substitute part numbers are not available for this obsolete component. Designers should consult NXP technical support for current equivalent devices or evaluate alternative manufacturers offering similar S-band LDMOS specifications.