MRF6S24140HSR5

MRF6S24140HSR5

$125.76
  • Description:RF MOSFET LDMOS 28V NI880S
  • Series:-

SKU:fec16dd31322 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI880S
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.39GHz
  • Gain:15.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:28W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:NI-880S
  • Supplier Device Package:NI-880S
  • Configuration:-

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MRF6S24140HSR5

Overview

The MRF6S24140HSR5 is an N-channel LDMOS RF power transistor manufactured by Freescale Semiconductor, designed for high-performance applications in the S-band. It operates within a frequency range of 2.3 GHz to 2.5 GHz and delivers a typical output power of 140 watts with a gain of approximately 18 dB when biased at 28 volts. The device utilizes a robust NI-780S surface-mount package, which facilitates efficient thermal management and reliable integration into compact RF amplifier modules. This component is engineered to provide linear amplification with high efficiency, making it suitable for demanding wireless communication infrastructure requirements.

Feature Summary

  • High linearity performance optimized for complex modulation schemes
  • Robust NI-780S surface-mount package for enhanced thermal dissipation
  • Designed for stable operation in S-band frequency ranges
  • Integrated gate protection structures for improved reliability

Applications

  • Base station power amplifiers
  • Wireless communication infrastructure
  • Broadband RF amplifier modules

Procurement Notes

Verify the specific suffix 'SR5' indicates tape-and-reel packaging configuration. Confirm RoHS compliance status as per current manufacturer declarations. Check for obsolescence notices or lifecycle status updates from NXP/Freescale. Ensure compatibility with NI-780S footprint designs during procurement planning.

Selection Notes

Select this component for S-band applications requiring high output power density. Compare gain and efficiency curves against alternative devices in the MRF6S series. Verify thermal resistance specifications match the intended heatsink design. Ensure biasing circuits support the required 28V operating voltage for optimal performance.

Part Context

This part belongs to the MRF6S family of LDMOS transistors, widely used in cellular base stations. The '24' designation typically refers to the S-band frequency coverage (2.3-2.5 GHz). The '140' indicates the nominal output power class. These devices represent a generation of RF power solutions transitioning from older TO-220 packages to advanced surface-mount technologies for higher integration densities.

Replacement Considerations

Direct replacements may include other MRF6S series variants with similar power ratings but different frequency bands, such as MRF6S21100HSR5 for lower frequencies. Cross-reference pinouts and thermal characteristics carefully. Consult manufacturer substitution guides for equivalent performance in S-band applications.

MRF6S24140HSR5MRF6S24140HSR5
$125.76
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