MRF6S27085HR5

Overview

The MRF6S27085HR5 is a silicon RF power transistor designed for broadband applications in the 1.7 to 2.7 GHz frequency range. It utilizes Freescale's proprietary LDMOS technology, providing high gain and linearity suitable for demanding wireless infrastructure environments. The device is housed in a rugged surface-mount package engineered for efficient thermal dissipation and reliable operation under high-power conditions.

Feature Summary

• Broadband operational capability across the 1.7 to 2.7 GHz spectrum
• High gain and linearity characteristics inherent to LDMOS construction
• Ruggedized design optimized for harsh RF environments

Applications

• Base station power amplifiers
• Wireless communication infrastructure
• Broadband RF signal generation

Procurement Notes

Verify the specific suffix HR5 against the manufacturer datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure compatibility with existing PCB thermal pads and impedance matching networks before integration.

Selection Notes

Select this component when a single-device solution is required for the 1.7-2.7 GHz band. Evaluate thermal management requirements based on the specific output power targets and duty cycles of the intended amplifier topology.

Part Context

This part belongs to the MRF6S series of silicon LDMOS transistors. These components are widely utilized in cellular base stations and other RF systems requiring robust performance without the complexity of GaN devices.

Replacement Considerations

Consult official substitution guides for direct replacements. Verify that any alternative device matches the footprint, thermal resistance, and electrical parameters of the original specification.