MRF6S9060NBR1

Overview

The MRF6S9060NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a maximum junction temperature of 225°C. Typical performance includes 14 Watts average output power in single-carrier N-CDMA at 880 MHz, 21 Watts average in GSM EDGE across 921-960 MHz, and 60 Watts continuous wave output in GSM applications.

Feature Summary

• Integrated electrostatic discharge protection
• Characterized with series equivalent large-signal impedance parameters
• Capable of handling high voltage standing wave ratio conditions

Applications

• Large-signal common-source amplifier applications in 28 volt base station equipment
• Single-carrier N-CDMA amplification
• GSM EDGE signal processing
• Broadband GSM transmission

Procurement Notes

Verify component authenticity through authorized channels as the device is no longer manufactured. Confirm RoHS compliance status via Certificate of Analysis. Validate package integrity against specified thermal resistance values before integration into final assemblies.

Selection Notes

Evaluate thermal management requirements carefully due to the 225°C maximum junction temperature capability. Ensure biasing circuits support the specified gate threshold voltage range. Verify that the application environment remains within the defined operating case temperature limits to maintain reliability.

Part Context

This lateral N-channel RF power MOSFET was originally produced by Freescale Semiconductor. The manufacturing line has since transitioned to NXP Semiconductors following corporate restructuring. The specific B suffix variant indicates a lead-free termination configuration compliant with environmental directives.

Replacement Considerations

Refer to Device Migration notification PCN12895 for details regarding the replacement of this component by the MRFE6S9060NR1.