MRF6S9060NR1

MRF6S9060NR1

$19.48
  • Description:RF MOSFET LDMOS 28V TO270-2
  • Series:-

SKU:f7f4c1e081d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO270-2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:880MHz
  • Gain:21.4dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:14W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AA
  • Supplier Device Package:TO-270-2
  • Configuration:-

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MRF6S9060NR1

Overview

The MRF6S9060NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a maximum junction temperature of 225°C. Typical performance includes 14 Watts average output power in single-carrier N-CDMA at 880 MHz, achieving 21.4 dB gain and 32.1% efficiency. In GSM EDGE mode across 921-960 MHz, it delivers 21 Watts average output with 20 dB gain and 46% efficiency.

Feature Summary

  • Broadband RF power amplification capability suitable for large-signal common-source amplifier applications in base station equipment.
  • Integrated electrostatic discharge (ESD) protection mechanisms compliant with Human Body Model, Machine Model, and Charge Device Model standards.
  • High thermal resilience utilizing a plastic package capable of sustaining a junction temperature up to 225°C.

Applications

  • Single-carrier N-CDMA base station amplifiers
  • GSM EDGE communication systems
  • General GSM cellular infrastructure

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package type and reel specifications. Confirm RoHS compliance status as indicated by the 'N' suffix. Check for active device migration notices or end-of-life notifications prior to finalizing procurement plans.

Selection Notes

Evaluate the component based on its suitability for 28-volt base station environments requiring high gain and broadband performance. Ensure the design accommodates the specified thermal resistance characteristics and impedance parameters for optimal matching networks.

Part Context

This lateral N-channel MOSFET belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. The device was subsequently replaced by the MRFE6S9060NR1 variant. The original MRF6S9060NBR1 version is no longer manufactured.

Replacement Considerations

Refer to Device Migration PCN12895 for details regarding the transition from MRF6S9060NR1 to MRFE6S9060NR1.

MRF6S9060NR1MRF6S9060NR1
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