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The MRF6S9060NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a maximum junction temperature of 225°C. Typical performance includes 14 Watts average output power in single-carrier N-CDMA at 880 MHz, achieving 21.4 dB gain and 32.1% efficiency. In GSM EDGE mode across 921-960 MHz, it delivers 21 Watts average output with 20 dB gain and 46% efficiency.
Verify the specific ordering suffix against current manufacturer documentation to confirm package type and reel specifications. Confirm RoHS compliance status as indicated by the 'N' suffix. Check for active device migration notices or end-of-life notifications prior to finalizing procurement plans.
Evaluate the component based on its suitability for 28-volt base station environments requiring high gain and broadband performance. Ensure the design accommodates the specified thermal resistance characteristics and impedance parameters for optimal matching networks.
This lateral N-channel MOSFET belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. The device was subsequently replaced by the MRFE6S9060NR1 variant. The original MRF6S9060NBR1 version is no longer manufactured.
Refer to Device Migration PCN12895 for details regarding the transition from MRF6S9060NR1 to MRFE6S9060NR1.