MRF6S9130HR3

Overview

The MRF6S9130HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 865 to 960 MHz frequency range. It operates at a drain-source voltage of 28 Vdc with a maximum rating of 68 Vdc. The device delivers 27 Watts average output power for single-carrier N-CDMA signals at 880 MHz, achieving a power gain of 19.2 dB and a drain efficiency of 30.5%. For GSM EDGE applications within the 921-960 MHz band, it provides 56 Watts average output power with 44% drain efficiency. The component utilizes an NI-780 package.

Feature Summary

• Internally matched input network for simplified circuit design
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to a maximum of 32 VDD
• Characterized using series equivalent large-signal impedance parameters

Applications

• N-CDMA base station amplifiers
• GSM base station amplifiers
• GSM EDGE base station amplifiers
• Multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation before procurement. Confirm that the R3 suffix corresponds to the required tape and reel packaging configuration. Ensure compatibility with the NI-780 case style. Validate RoHS compliance status as specified in the official datasheet prior to finalizing supply chain arrangements.

Selection Notes

Select this component for designs requiring high ruggedness and internal matching within the 865 to 960 MHz spectrum. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the device's capability to handle high voltage standing wave ratios when designing output matching networks for robust system performance.

Part Context

This part belongs to the RF Power Field Effect Transistors category manufactured by Freescale Semiconductor, which was later acquired by NXP USA Inc. The MRF6S9130H series represents lateral N-channel devices specifically engineered for wireless communication infrastructure. These transistors are characterized for use in demanding linear amplifier environments requiring high power density.

Replacement Considerations

Public confirmed substitute part numbers: MRFE6S9130HR3, MRFE6S9130HSR3. Refer to Device Migration PCN12895 for detailed transition information.