MRF6S9130HR5

Overview

The MRF6S9130HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 865 to 960 MHz frequency range. It operates at a drain voltage of 28 Vdc with a maximum rating of 68 Vdc. The device delivers 27 Watts average output power in single-carrier N-CDMA mode, achieving 19.2 dB gain and 30.5% efficiency. In GSM EDGE mode, it provides 56 Watts average output with 44% efficiency. The component utilizes an NI-780 package.

Feature Summary

• Internally matched input for simplified circuit design
• Integrated electrostatic discharge protection
• Qualified for operation up to 32 Vdc drain voltage
• Characterized using series equivalent large-signal impedance parameters

Applications

• N-CDMA base station amplifiers
• GSM base station amplifiers
• GSM EDGE base station amplifiers
• Multicarrier amplifier applications

Procurement Notes

Verify the exact suffix against the datasheet, as HR3 and HSR3 denote specific packaging formats. Confirm RoHS compliance status and check for active obsolescence notices or migration paths to newer part numbers before finalizing procurement plans.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and power density. Ensure thermal management supports the specified junction temperature limits. Validate impedance matching networks against the provided source and load impedance data for optimal performance across the target frequency band.

Part Context

This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor portfolio intended for wireless communication infrastructure. It serves as a critical active element in power amplifier stages for cellular base stations operating within the 800 MHz and 900 MHz bands.

Replacement Considerations

The MRF6S9130HR3 and MRF6S9130HSR3 variants are replaced by MRFE6S9130HR3 and MRFE6S9130HSR3. Refer to Device Migration PCN12895 for detailed transition information.

FAQ

What is the typical ACPR performance for N-CDMA signals?

The Adjacent Channel Power Ratio is typically -48.1 dBc measured in a 30 kHz bandwidth at a ±750 kHz offset.

How does the device handle high Voltage Standing Wave Ratio conditions?

The transistor is capable of handling a 10:1 VSWR when operated at 28 Vdc, 880 MHz, and 130 Watts CW output power.

What is the Error Vector Magnitude during GSM EDGE operation?

The Error Vector Magnitude is typically 1.5% rms under standard test conditions.