MRF6S9160HR3

$82.49

Description：RF MOSFET LDMOS 28V NI780
Series：-

SKU:3156f42aa9d2 Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI780
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：880MHz
Gain：20.9dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.2 A
Power - Output：35W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：SOT-957A
Supplier Device Package：NI-780H-2L
Configuration：-

Download product information

MRF6S9160HR3

Overview

The MRF6S9160HR3 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for RF power applications. It operates at frequencies from 865 to 960 MHz and is qualified for a maximum drain voltage of 32 VDC. The device features integrated ESD protection and is internally matched for ease of use. It is characterized with series equivalent large-signal impedance parameters and is capable of handling high VSWR conditions, ensuring enhanced ruggedness for base station amplifier designs.

Feature Summary

Designed for multicarrier amplifier applications in cellular base stations
Internally matched for simplified circuit integration
Integrated electrostatic discharge (ESD) protection
Qualified for operation up to 32 VDD

Applications

N-CDMA base station amplifiers
GSM base station amplifiers
GSM EDGE base station amplifiers
Multicarrier amplifier systems

Procurement Notes

Verify the specific suffix 'HR3' against official documentation to confirm reel packaging specifications. Confirm current lifecycle status as components may be obsolete or subject to limited supply. Ensure compatibility with existing thermal management solutions and impedance matching networks before procurement.

Selection Notes

Select this component for wideband RF power amplification within the 865–960 MHz range. Consider its internal matching capabilities to reduce external component count. Evaluate thermal requirements based on the intended output power and duty cycle. Verify that the system design supports the specified 32 V maximum drain voltage rating.

Part Context

This part belongs to the MRFE6S family of RF power LDMOS transistors manufactured by Freescale Semiconductor. These devices are engineered specifically for wireless communication infrastructure. The family offers robust performance and reliability for demanding RF environments.