MRF6V12250HSR3

Overview

The MRF6V12250HSR3 is an RF MOSFET transistor from the NXP VHV6 series, designed for high-voltage applications. It delivers a continuous wave output power of 250W at a drain voltage of 50V. The device utilizes the NI780H package and employs LDMOS technology. This component is specifically engineered for demanding radio frequency environments requiring robust power handling capabilities.

Feature Summary

• High-power RF performance with 250W output capability
• Optimized for high-voltage 50V operation
• Built on reliable LDMOS semiconductor technology

Applications

• Avionic systems
• Military communication equipment
• Industrial RF heating

Procurement Notes

Verify current lifecycle status as this part may be obsolete or subject to discontinuation. Confirm package integrity and authenticity through authorized channels. Check for specific ordering suffixes that might affect availability or specifications. Ensure compliance with relevant environmental standards before procurement.

Selection Notes

Select this component for designs requiring high power density in a compact form factor. Consider thermal management requirements due to significant power dissipation. Verify compatibility with existing biasing networks and impedance matching circuits. Evaluate alternative parts if end-of-life constraints impact long-term production viability.

Part Context

This transistor belongs to the MRF6V family, which focuses on high-voltage RF power amplification. It serves as a critical active element in transmitter stages where efficiency and linearity are paramount. The NI780H package provides mechanical stability and thermal conductivity suitable for base-mounted installations in ruggedized enclosures.