MRF6V12250HSR5

Overview

The MRF6V12250HSR5 is a pulsed lateral N-channel RF power MOSFET designed for applications operating between 960 and 1215 MHz. It features an NI-780S package with screw mount installation. The device supports a drain-source voltage of up to 100 Vdc and operates at case temperatures up to 150 °C. Typical pulsed performance at 1030 MHz includes 275 Watts peak output power, 20.3 dB power gain, and 65.5% drain efficiency.

Feature Summary

• Internally matched input and output circuits for ease of use
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to 50 Vdd
• Greater negative gate-source voltage range for improved Class C operation

Applications

• Pulsed RF power amplifier designs
• Broadband transmitter systems within the 960-1215 MHz band
• Military and aerospace communication equipment

Procurement Notes

Verify the specific suffix 'SR5' against official documentation to confirm packaging details, as datasheets reference 'R3' tape and reel configurations. Confirm RoHS compliance status through manufacturer certificates. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the technical data.

Selection Notes

Select this component for high-power pulsed applications requiring broadband coverage from 960 to 1215 MHz. Consider the internal matching network which simplifies circuit design. Evaluate thermal constraints carefully, as continuous use at maximum temperature affects mean time to failure. Verify impedance matching networks against the series equivalent large-signal impedance parameters provided in the datasheet.

Part Context

This part belongs to the MRF6V12250H family of RF power transistors manufactured by NXP Semiconductors (formerly Freescale). The family includes variants such as MRF6V12250HR3 and MRF6V12250HSR3, differing primarily in packaging and reel specifications. These devices are silicon-based lateral MOSFETs optimized for high-efficiency pulsed operation.

Replacement Considerations

MRF6V12250HSR5

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device include internal matching?

Yes, the device is internally matched on both the input and output ports.

What is the typical drain efficiency at 1030 MHz?

The typical drain efficiency is 65.5% under pulsed conditions at 1030 MHz.