MRF6V13250HSR3

Overview

The MRF6V13250HSR3 is a high-voltage, lateral N-channel RF power MOSFET manufactured by NXP USA Inc. Designed for avionics applications, this component operates within the VHV6 series and delivers 250 W of continuous wave output power. It utilizes an NI780S package to facilitate thermal management in demanding environments.

Feature Summary

• Engineered specifically for avionics systems requiring robust RF performance
• High-voltage lateral N-channel architecture for reliable operation
• Integrated into the VHV6 series for standardized integration

Applications

• Avionics communication systems
• Military radio transmitters
• Aerospace RF power amplification

Procurement Notes

Verify the specific suffix against official NXP documentation to confirm package type and environmental compliance. Ensure the part number matches the exact avionics specification required for your design. Cross-reference with authorized distributors to confirm current manufacturing status and availability.

Selection Notes

Select this component when designing avionics equipment that requires 250 W RF power output. The NI780S package is suitable for applications needing specific thermal dissipation characteristics. Confirm voltage requirements align with the VHV6 series specifications before finalizing the design.

Part Context

This device belongs to the MRF6V13250 family of high-voltage RF power transistors. It is distinct from lower-power variants and shares architectural similarities with other VHV6 series components designed for rugged aerospace and defense environments.

Replacement Considerations

Consult official NXP substitution guides for verified alternatives. Generic replacements may not meet avionics certification standards.