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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO270G-2
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：220MHz
- Gain：23.9dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：30 mA
- Power - Output：10W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-270BA
- Supplier Device Package：TO-270G-2
- Configuration：-
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Overview
The MRF6V2010GNR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 450 MHz. It operates at a maximum drain-source voltage of 110 Vdc and supports a junction temperature of 225°C. The device features integrated ESD protection and is characterized with series equivalent large-signal impedance parameters. Typical performance at 220 MHz includes a power gain of 23.9 dB, drain efficiency of 62%, and 10 W output power at 50 Vdc.
Feature Summary
- Broadband operation capability from 10 MHz to 450 MHz
- High thermal stability with a 225°C capable plastic package
- Integrated electrostatic discharge (ESD) protection
- Qualified for high-voltage operation up to 50 Vdd
Applications
- Industrial, Medical, and Scientific (IMS) equipment
- CW large-signal RF output stages
- RF driver amplifier applications
Procurement Notes
Verify the specific suffix 'R1' confirms the tape and reel packaging configuration containing 500 units on a 13-inch reel with 24 mm tape width. Confirm the base part number matches the TO-270G-2 plastic package variant. Ensure compatibility with the manufacturer's current revision history before finalizing procurement orders.
Selection Notes
Select this component for broadband designs requiring high reliability and ruggedness. The device requires external input and output matching networks as it is unmatched. Designers must utilize the provided series equivalent large-signal impedance parameters for accurate circuit simulation and layout optimization.
Part Context
This transistor belongs to the MRF6V2010 family, which includes variants such as MRF6V2010N and MRF6V2010NB. These devices are lateral N-channel RF power MOSFETs intended for demanding RF environments. The family shares core electrical characteristics but differs in physical package styles and mounting configurations.
Replacement Considerations
MRF6V2010N
FAQ
Is the MRF6V2010GN internally matched?
No, the device is unmatched and requires external input and output matching networks.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225°C.
Does the device include ESD protection?
Yes, the device features integrated ESD protection.
