MRF6V2010GNR5

Overview

The MRF6V2010GNR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 450 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a case operating temperature of 150°C and a junction temperature capability of 225°C. The device delivers 10 W output power at 220 MHz, achieving a typical power gain of 23.9 dB and drain efficiency of 62%. It features integrated ESD protection and is characterized for handling 10:1 VSWR.

Feature Summary

• Broadband operation from 10 to 450 MHz
• High thermal stability with 225°C capable plastic package
• Integrated electrostatic discharge protection

Applications

• Industrial, medical, and scientific equipment
• CW large-signal output stages
• Driver amplifier applications

Procurement Notes

Verify the specific suffix 'R5' against official documentation, as standard datasheets list 'R1' (500 units, 24 mm tape). Confirm current availability status directly with NXP or authorized distributors, as RF components may undergo lifecycle changes. Ensure compliance with RoHS and REACH requirements specified in the manufacturing data sheet.

Selection Notes

Select this component for broadband designs requiring high linearity and ruggedness up to 450 MHz. The TO-270G-2 package supports surface mount assembly. Designers must account for the exposed backside source terminal for proper thermal management and grounding. Verify impedance matching networks using the provided series equivalent large-signal impedance parameters.

Part Context

This part belongs to the MRF6V2010N family, which includes variants like MRF6V2010N and MRF6V2010NB. These devices are lateral N-channel broadband RF power MOSFETs intended for high-power applications. The GN variant specifically utilizes the TO-270G-2 plastic package, distinguishing it from other package options within the same electrical specification family.

Replacement Considerations

MRF6V2010N and MRF6V2010NB are electrically similar but differ in package type (TO-270-2 and TO-272-2 respectively). Substitution requires verifying mechanical fit and thermal interface compatibility.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Is the device matched for input and output?

No, the devices are unmatched and suitable for use in industrial, medical, and scientific applications requiring external matching networks.

What is the typical power gain at 220 MHz?

The typical power gain is 23.9 dB at 220 MHz with VDD = 50 Vdc, IDQ = 30 mA, and Pout = 10 W.