MRF6V2010NR1

Overview

The MRF6V2010NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 450 MHz. It operates at a maximum drain-source voltage of 50 Vdc with a typical power gain of 23.9 dB and drain efficiency of 62% at 220 MHz, delivering 10 W CW output power. The device features integrated ESD protection and is qualified for operation up to 225°C junction temperature.

Feature Summary

• Broadband RF performance suitable for industrial, medical, and scientific applications
• Integrated electrostatic discharge (ESD) protection
• High thermal capability with a 225°C capable plastic package

Applications

• Industrial, Medical, and Scientific (IMS) equipment
• Continuous wave (CW) large-signal output amplifiers
• RF driver stages

Procurement Notes

Verify the R1 suffix indicates a 500-unit reel quantity on a 24 mm tape width. Confirm the TO-270-2 plastic package matches the design requirements. Ensure compliance with RoHS standards as specified in the ordering information table.

Selection Notes

Select this component for broadband RF applications requiring high reliability under continuous wave conditions. Consider the 225°C operating junction temperature for thermal management. Verify impedance matching networks against the provided series equivalent source and load impedances for optimal performance.

Part Context

This part belongs to the MRF6V2010N family, which includes variants like MRF6V2010NB and MRF6V2010GN. These lateral N-channel MOSFETs are engineered for robust RF power amplification across a wide frequency range, supporting various mounting methods including bolt-down and solder reflow.

Replacement Considerations

MRF6V2010N

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Does the device include ESD protection?

Yes, the MRF6V2010NR1 features integrated ESD protection characterized according to Human Body Model, Machine Model, and Charge Device Model standards.

What is the typical power gain at 220 MHz?

At 220 MHz with a 50 Vdc supply and 10 W CW output power, the typical power gain is 23.9 dB.