MRF6V2300NBR5

Overview

The MRF6V2300NBR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at VDD = 50 Volts with a typical drain efficiency of 68% and power gain of 25.5 dB at 220 MHz, delivering 300 Watts output power. The device features integrated ESD protection, RoHS compliance, and a 225°C capable plastic package.

Feature Summary

• Broadband operation suitable for frequencies up to 600 MHz
• Integrated electrostatic discharge (ESD) protection
• Qualified for maximum 50 VDD operation
• Characterized with series equivalent large-signal impedance parameters

Applications

• CW large-signal output amplifiers
• Driver stages in RF systems
• Industrial, medical, and scientific (IMS) applications

Procurement Notes

Verify the specific suffix 'R5' against official documentation to confirm packaging details, as datasheets reference 'R1' for tape and reel configurations. Ensure compatibility with TO-270WB-4 mounting requirements and thermal management guidelines specified in application notes AN1907 or AN3263.

Selection Notes

Select this component for high-power broadband RF designs requiring unmatched single-ended operation. Consider the 225°C junction temperature capability and 10:1 VSWR tolerance when designing matching networks for robust performance across the 10-600 MHz range.

Part Context

This part belongs to the MRF6V2300N family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor (now NXP). It is a lateral N-channel device optimized for high-efficiency power amplification in broadcast and communication bands.

Replacement Considerations

MRF6V2300NR1 is a documented variant within the same family offering identical electrical characteristics but potentially different packaging or reel specifications.