MRF6V3090NBR5

$43.36

Description：RF MOSFET LDMOS 50V TO272-4
Series：-

SKU:5355447a7914 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V TO272-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：860MHz
Gain：22dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：350 mA
Power - Output：18W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：TO-272BB
Supplier Device Package：TO-272 WB-4
Configuration：-

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MRF6V3090NBR5

Overview

The MRF6V3090NBR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadcast and commercial aerospace broadband applications. It operates from 470 to 1215 MHz with a 50 Vdc drain supply. In the UHF 470-860 MHz reference circuit, it delivers 18 W average output power at 21.6-22.9 dB gain and 26.8-28.3% drain efficiency. In the L-Band 960-1215 MHz reference circuit, it provides 90 W peak pulsed output power with 17.3-18.4 dB gain and 50.7-56.9% drain efficiency. The device features internal input matching and ESD protection.

Feature Summary

Internally input matched for ease of use
Capable of handling 10:1 VSWR at all phase angles
Integrated ESD protection
Excellent thermal stability

Applications

Broadcast applications
Commercial aerospace broadband applications
DVB-T (8k OFDM) transmission systems

Procurement Notes

Verify the specific suffix 'BR5' corresponds to the TO-272WB-4 plastic package and reel quantity requirements. Confirm that the ordering information matches the intended tape and reel specifications. Ensure compatibility with the manufacturer's standard terms and conditions of sale before finalizing procurement.

Selection Notes

Select this component for designs requiring broadband operation across UHF and L-band frequencies. Consider the internal input matching to simplify circuit design. Evaluate thermal management strategies given the maximum operating junction temperature rating. Validate performance parameters against specific application signal types and modulation schemes.

Part Context

This part belongs to the RF Power LDMOS Transistors family from Freescale Semiconductor, now NXP Semiconductors. It is an enhancement-mode lateral MOSFET optimized for high-power RF applications. The device is single-ended and utilizes a plastic over-molded package suitable for surface mount or bolt-down mounting methods.