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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO270-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：860MHz
- Gain：22dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：350 mA
- Power - Output：18W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-270AB
- Supplier Device Package：TO-270 WB-4
- Configuration：-
Download product information
Overview
The MRF6V3090NR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for broadcast and commercial aerospace broadband applications. It operates from 470 to 1215 MHz with a maximum drain-source voltage of 110 Vdc and a case operating temperature of 150 °C. The device delivers up to 90 W CW output power at 860 MHz and 90 W peak pulsed power in the L-Band (960–1215 MHz). It features internal input matching, integrated ESD protection, and excellent thermal stability.
Feature Summary
- Internally input matched for ease of use
- Integrated ESD protection
- Excellent thermal stability
- Greater negative gate-source voltage range for improved Class C operation
Applications
- Broadcast applications
- Commercial aerospace broadband applications
- L-band radar applications
Procurement Notes
Verify the specific ordering suffix 'R5' corresponds to the required tape and reel quantity and width before procurement. Confirm that the package type matches the design requirements, as the base model is available in different packages. Ensure the component meets RoHS compliance standards if applicable to the project specifications.
Selection Notes
Select this component for designs requiring high linearity and efficiency across UHF and L-Band frequencies. Consider the thermal resistance characteristics when designing heat sinks. Verify that the application circuit can handle the maximum ratings, particularly the drain-source voltage and junction temperature limits.
Part Context
This part belongs to the Freescale Semiconductor (now NXP) RF Power LDMOS Transistors family. It is specifically engineered for broadband RF power amplification. The 'NR5' suffix indicates a specific packaging configuration with 50 units per 56 mm tape on a 13-inch reel.
Replacement Considerations
MRF6V3090NBR1
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225 °C.
Does the device have internal input matching?
Yes, the device is internally input matched for ease of use.
What is the typical power gain at 860 MHz?
The typical power gain at 860 MHz is 22.0 dB.
