MRF6V4300NBR1

MRF6V4300NBR1

  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-

SKU:025b9e393532 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:450MHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:-

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MRF6V4300NBR1

Overview

The MRF6V4300NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc and delivers 300 Watts output power at 450 MHz with 22 dB gain and 60% efficiency. The device features integrated ESD protection, a 225°C capable plastic package, and RoHS compliance.

Feature Summary

  • Broadband RF Power Transistor
  • Integrated ESD Protection
  • High Thermal Capability

Applications

  • Industrial Applications
  • Medical Applications
  • Scientific Applications

Procurement Notes

Verify the exact ordering suffix against official documentation to confirm packaging specifications. Confirm that the component meets all required environmental standards and regulatory certifications before finalizing procurement decisions.

Selection Notes

Evaluate thermal management requirements carefully due to high power dissipation. Ensure the design supports the specified operating junction temperature limits. Verify impedance matching networks align with the provided series equivalent parameters for optimal performance.

Part Context

This component belongs to the MRF6V4300N family of broadband RF power lateral MOSFETs. It is engineered for single-ended configurations in industrial, medical, and scientific equipment requiring reliable high-power amplification across wide frequency bands.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility without verifying electrical characteristics and pinout configurations.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Is the device suitable for Class C operation?

Yes, it features a greater negative gate-source voltage range specifically designed to improve Class C operation.

How is the exposed backside of the package connected?

The exposed backside of the package serves as the source terminal for the transistor.

MRF6V4300NBR1MRF6V4300NBR1

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