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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Bulk
- Technology：LDMOS (Dual)
- Frequency：1.8MHz ~ 150MHz
- Gain：26dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：6:00 AM
- Power - Output：1000W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：2 N-Channel
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Overview
The MRF6VP11KHR5 is a lateral N-channel RF MOSFET transistor designed for broadband applications up to 130 MHz. It delivers 1000 W of output power with a drain-source breakdown voltage of 110 V and operates within a temperature range of -65 °C to +150 °C. The device utilizes the NI-1230 surface-mount package and supports gate-source voltages from -6 V to +10 V.
Feature Summary
- Lateral N-channel silicon construction optimized for high-power radio frequency amplification
- Broadband operational capability supporting frequencies up to 130 MHz
- High thermal tolerance enabling operation at elevated junction temperatures
Applications
- Industrial, Medical, and Scientific (IMS) equipment
- Pulse broadband amplifier systems
- High-power RF signal generation
Procurement Notes
Verify component authenticity through authorized channels as this part is obsolete. Confirm package integrity and pin alignment against the NI-1230 specification before integration. Review archived datasheets for updated handling instructions and soldering profiles to ensure reliable assembly during replacement projects.
Selection Notes
Select this component for designs requiring high power density in the sub-150 MHz spectrum. Ensure the circuit layout accommodates the specific thermal requirements of the NI-1230 package. Verify that the driving stage can provide the necessary negative gate bias for proper cutoff and positive drive for conduction.
Part Context
This device belongs to the MRF6VP11KH series of lateral N-channel broadband RF power MOSFETs. It shares architectural similarities with other high-power variants in the family but is distinguished by its specific 1000 W power rating and 130 MHz bandwidth limit. The NI-1230 package provides a standardized footprint for mounting on printed circuit boards.
Replacement Considerations
MRF6VP11KHR6
FAQ
What is the maximum operating frequency for this transistor?
The MRF6VP11KHR5 is rated for broadband operation up to 130 MHz.
Is this component suitable for continuous wave applications?
The documentation specifies design for pulse broadband applications rather than continuous wave operation.
What package type does this device use?
It utilizes the NI-1230 surface-mount package format.
