MRF6VP11KHR6

Overview

The MRF6VP11KHR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse wideband applications up to 150 MHz. It operates at a maximum drain-source voltage of 110 Vdc and features integrated ESD protection. At 130 MHz with a 50 Vdc supply, it delivers 1000 Watts peak output power (200 W average) with a typical power gain of 26 dB and drain efficiency of 71%. The device supports push-pull configurations and handles 10:1 VSWR.

Feature Summary

• Designed primarily for pulse wideband applications with frequencies up to 150 MHz
• Capable of handling 10:1 VSWR at 50 Vdc operation
• Integrated ESD protection qualified up to Human Body Model 2000 V
• Suitable for push-pull operation in industrial, medical, and scientific applications

Applications

• Industrial applications
• Medical applications
• Scientific applications

Procurement Notes

Verify the specific ordering suffix R6 against official documentation to confirm packaging specifications. The datasheet indicates the R6 suffix corresponds to 150 units per reel with a 56 mm tape width on a 13-inch reel. Ensure compatibility with existing inventory or design requirements before procurement.

Selection Notes

Select this component for high-power broadband designs requiring robust VSWR tolerance. Verify thermal management capabilities against the specified junction-to-case thermal resistance values. Confirm that the application utilizes a balanced push-pull topology to leverage the device's full performance potential within the 1.8 to 150 MHz frequency range.

Part Context

This part belongs to the MRF6VP11KH series of RF Power LDMOS transistors manufactured by Freescale Semiconductor, now NXP USA Inc. The series includes variants like the MRF6VP11KGSR5, which differs in package style but shares similar electrical characteristics. These devices are characterized using series equivalent large-signal impedance parameters for accurate circuit modeling.

Replacement Considerations

The MRF6VP11KGSR5 is a documented variant within the same family. Both parts share identical electrical ratings and performance metrics. Selection between them depends solely on the required package configuration, as the KHR6 uses a standard leaded format while the KGSR5 utilizes a gull-wing package.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device support continuous wave operation?

Yes, the device is capable of CW operation with adequate cooling.

What is the gate quiescent voltage range?

The gate quiescent voltage ranges from 1.5 Vdc to 3.5 Vdc under typical test conditions.