MRF6VP21KHR5

Overview

The MRF6VP21KHR5 is an enhancement-mode lateral MOSFET designed for commercial and industrial broadband applications. It operates within the frequency range of 2110 to 2200 MHz. The device is optimized for broadcast applications requiring high power output. It utilizes a lead-free ceramic package suitable for surface mount technology. The component supports a drain voltage of 30 volts and delivers significant average power performance in RF amplifier circuits.

Feature Summary

• Enhancement-mode lateral MOSFET construction
• Broadband operation capability
• High power density design

Applications

• Commercial broadcast transmitters
• Industrial broadband amplifiers
• RF power modules

Procurement Notes

Verify the datasheet revision number against the manufacturer's official documentation to ensure compatibility with current manufacturing standards. Confirm that the specific suffix indicates the correct tape and reel configuration if automated assembly is required. Cross-reference the part number with the original Freescale Semiconductor records, noting the corporate transition to NXP Semiconductors for accurate sourcing channels.

Selection Notes

Select this component for applications requiring stable performance in the 2110-2200 MHz band. Ensure the thermal management system can handle the dissipated power at the specified operating voltage. Verify that the input and output impedance matching networks are designed for the specific gain and efficiency characteristics provided in the technical data sheet.

Part Context

This device belongs to the MRF6VP series of RF power LDMOS transistors. The series is characterized by its robustness and suitability for wideband operations. These components are widely used in infrastructure equipment where reliability and linearity are critical. The specific model variant denotes the packaging and termination style intended for high-volume production environments.

Replacement Considerations

Consult the official cross-reference list for direct replacements. Ensure any substitute maintains the same pinout and thermal footprint. Verify that alternative devices meet the specific frequency and power requirements of the original design.