MRF6VP2600HR5

Overview

The MRF6VP2600HR5 is a lateral N-channel broadband RF power MOSFET designed for wideband applications up to 500 MHz. It operates with a maximum drain-source voltage of 110 Vdc and supports push-pull configurations. The device delivers 600 W peak pulsed output power at 225 MHz with a 100 μsec pulse width and 20% duty cycle, achieving 59% drain efficiency. In continuous wave operation at 352.2 MHz, it provides 600 W output with 68% efficiency. At 88-108 MHz, the transistor maintains 600 W CW output with 74% efficiency. Typical DVB-T OFDM performance yields 125 W average output at 225 MHz.

Feature Summary

• Designed for unmatched push-pull operation in broadcast applications
• Capable of handling high VSWR conditions during pulsed operation
• Integrated electrostatic discharge protection mechanisms
• Characterized using series equivalent large-signal impedance parameters

Applications

• Wideband broadcast transmitter systems
• DVB-T OFDM single channel amplification
• High power pulsed radar transmitters
• Broadband CW amplifier stages

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel specifications. Confirm RoHS compliance status and material declarations prior to procurement. Ensure thermal management solutions align with junction-to-case resistance requirements for the intended operating frequency and power level. Validate that the component meets environmental standards required for the final assembly process.

Selection Notes

Select this component for designs requiring high power density across broad frequency ranges without internal matching networks. Evaluate thermal constraints carefully as continuous operation affects mean time to failure. Consider the negative gate-source voltage range if Class C operation is necessary. Verify input and output impedance matching networks against the provided series equivalent source and load impedance data for optimal performance.

Part Context

This device belongs to the MRF6VP family of lateral N-channel enhancement-mode MOSFETs from Freescale Semiconductor. It shares architectural similarities with other high-power RF transistors in the series but is distinguished by its specific broadband capabilities and high voltage tolerance. The technology utilizes silicon lateral MOSFET structures optimized for high linearity and power gain in demanding RF environments.

Replacement Considerations

MRF6VP2600H

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Is the device internally matched?

No, the device is unmatched and requires external matching networks.

Can the device operate in Class C mode?

Yes, it features a greater negative gate-source voltage range suitable for improved Class C operation.