MRF6VP2600HR6

$168.13

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:1a7db5eb414f Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：225MHz
Gain：25dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：2.6 A
Power - Output：125W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230
Supplier Device Package：NI-1230
Configuration：Dual

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MRF6VP2600HR6

Overview

The MRF6VP2600HR6 is a lateral N-channel enhancement-mode RF power MOSFET designed for wideband applications up to 500 MHz. It operates at a maximum drain-source voltage of 110 Vdc and delivers 600 W peak pulsed output power at 225 MHz with a 50 V supply. The device features an integrated ESD protection structure, qualified for push-pull operation, and supports CW operation with adequate cooling. It is RoHS compliant and supplied in tape and reel packaging.

Feature Summary

Lateral N-channel enhancement-mode MOSFET technology
Integrated electrostatic discharge (ESD) protection
Qualified for push-pull configuration operation
RoHS compliant construction

Applications

Wideband broadcast applications
Air traffic control radar systems
Surveillance radar systems
Weather monitoring radar systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and reel specifications. Confirm that the component meets all applicable environmental compliance standards required for the intended deployment region. Ensure thermal management solutions align with the junction-to-case thermal resistance values provided in the datasheet to maintain safe operating temperatures during continuous wave operation.

Selection Notes

Select this component for designs requiring high peak power output within the 2 to 500 MHz frequency range. The device is optimized for unmatched configurations suitable for broadcast environments. Evaluate the thermal requirements carefully, as continuous use at maximum temperature affects mean time to failure. Ensure the driving circuitry can support the necessary gate-source voltage ranges for optimal Class C or linear operation modes.

Part Context

This part belongs to the Freescale Semiconductor RF Power LDMOS transistor family, specifically engineered for broadband performance. It utilizes a NI-1230 case style package designed for surface mount installation. The device represents an advancement in LDMOS technology, offering improved gain and efficiency metrics compared to earlier generations for single-device applications at L-band frequencies.