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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO272-4
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：860MHz
- Gain：22dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：350 mA
- Power - Output：18W
- Voltage - Rated：115 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-272BB
- Supplier Device Package：TO-272 WB-4
- Configuration：Dual
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Overview
The MRF6VP3091NBR1 is a dual LDMOS RF power transistor designed for base station applications. It operates in the VHF band, specifically covering frequencies from 148 MHz to 174 MHz. The device features a leadless surface-mount package optimized for thermal performance and high reliability. Key electrical characteristics include a drain voltage of 50V and a typical output power capability suitable for cellular infrastructure amplification stages.
Feature Summary
- Dual LDMOS technology for enhanced linearity and efficiency
- Leadless surface-mount package design for superior thermal dissipation
- Optimized for VHF frequency range operation in base station environments
Applications
- VHF cellular base station power amplifiers
- Broadband RF amplification modules
- Base station transmitter front-ends
Procurement Notes
Verify the specific suffix 'BR1' against official Freescale (now NXP) documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with existing PCB footprints by cross-referencing the mechanical drawing dimensions. Confirm that the component meets current RoHS directives as per the manufacturer's latest compliance statements before procurement.
Selection Notes
Select this component when designing VHF base station amplifiers requiring robust thermal management and high power density. The dual configuration allows for balanced push-pull topologies. Evaluate thermal resistance values relative to the system's heat sink capabilities. Ensure the operating frequency aligns strictly within the 148-174 MHz range for optimal performance metrics.
Part Context
This part belongs to the MRF6VP series of LDMOS transistors developed for wireless communications infrastructure. The series is characterized by high gain and efficiency at VHF frequencies. It represents an evolution in base station component design, focusing on reducing size while maintaining power output standards required for modern cellular networks.
Replacement Considerations
Consult official substitution guides for direct equivalents. Generic replacements may not match the specific thermal or electrical characteristics. Verify pinout compatibility and package dimensions before integrating alternative components into the design.
