MRF6VP3091NBR5

MRF6VP3091NBR5

  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-

SKU:50ea68d95bc2 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO272-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:860MHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:18W
  • Voltage - Rated:115 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-272BB
  • Supplier Device Package:TO-272 WB-4
  • Configuration:Dual

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MRF6VP3091NBR5

Overview

The MRF6VP3091NBR5 is an enhancement-mode lateral MOSFET RF power transistor designed for commercial and industrial broadband applications. It operates within the 470 to 860 MHz frequency range and delivers a typical output power of 90 W at a 50 V supply voltage. The device is suitable for broadcast applications, offering high gain and efficiency across its specified bandwidth.

Feature Summary

  • Enhancement-mode Lateral MOSFET technology optimized for broadband RF performance
  • Designed for commercial and industrial applications with wide frequency coverage
  • Integrated stability enhancements for reliable operation in amplifier circuits

Applications

  • Broadcast transmitter output stages
  • Commercial broadband RF power amplifiers
  • Industrial RF heating and plasma generation systems

Procurement Notes

Verify the specific suffix BR5 against the manufacturer's current datasheet revision to confirm package type and tape-and-reel specifications. Ensure compatibility with existing thermal management designs, as this component requires appropriate heat sinking for sustained operation at rated power levels. Cross-reference part numbers with authorized distributors to confirm availability status.

Selection Notes

Select this component when designing amplifiers requiring broad frequency coverage between 470 and 860 MHz without retuning. Consider the 50 V operating voltage and 90 W output capability relative to system power requirements. Evaluate thermal resistance characteristics to ensure adequate cooling solutions are integrated into the final product design for stable performance.

Part Context

This device belongs to NXP's portfolio of RF Power LDMOS Transistors, specifically engineered for robust performance in demanding RF environments. It complements other broadband transistors in the series, providing designers with scalable options for various power and frequency requirements in communication infrastructure.

Replacement Considerations

Consult official substitution guides for equivalent devices such as the MRF6VP3091NR1 or MRF6VP3091NR5. Verify pinout compatibility and electrical parameter overlaps before integrating any alternative components into existing circuit layouts.

MRF6VP3091NBR5MRF6VP3091NBR5

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