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The MRF6VP3091NR1 is an enhancement-mode lateral MOSFET RF power transistor designed for commercial and industrial broadband applications. It operates within the 470 to 860 MHz frequency range and delivers 90 W of output power at a 50 V supply voltage. The device is suitable for broadcast applications, offering typical performance metrics including a gain of approximately 21.6 dB and drain efficiency ranging from 26.4% to 31.0% under specific bias conditions.
Verify the exact ordering suffix against official NXP documentation to ensure correct package and reel specifications. Confirm current manufacturing status as some variants may be discontinued or subject to change without notice. Cross-reference the datasheet revision date with your design requirements to ensure compatibility with existing schematics and thermal management plans.
Select this component for designs requiring robust LDMOS performance in the 470-860 MHz band. Ensure the application circuit supports the required 50 V drain bias and appropriate gate drive levels for enhancement-mode operation. Consider thermal dissipation capabilities given the 90 W output power rating and verify impedance matching networks are tuned for the target broadband frequency range.
This part belongs to the MRF6VP3091N series of RF Power LDMOS Transistors manufactured by Freescale Semiconductor, now part of NXP Semiconductors. The NR1 suffix typically denotes a specific tape and reel packaging configuration for automated assembly. These devices are engineered to provide reliable high-power performance in demanding RF environments.
Public confirmed substitute part numbers were not identified in the provided source material. Consult official NXP replacement guides or contact technical support for validated cross-references if this component is no longer available.