MRF6VP3450HSR6

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:f212101c87f3 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：860MHz
Gain：22.5dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.4 A
Power - Output：90W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230S
Supplier Device Package：NI-1230S
Configuration：Dual

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MRF6VP3450HSR6

Overview

The MRF6VP3450HSR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications from 470 to 860 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a typical power gain of 22 dB. The device delivers 450 Watts PEP in two-tone performance and handles 90 Watts average output in DVB-T OFDM signals. It features internal input matching, ESD protection, and is qualified up to 50 Vdd operation.

Feature Summary

Internally input matched for ease of use
Integrated ESD protection
Designed for push-pull operation
Greater negative gate-source voltage range for improved Class C operation

Applications

Large-signal common-source amplifier applications
50 volt analog television transmitter equipment
50 volt digital television transmitter equipment

Procurement Notes

Verify the specific ordering suffix R6 against official documentation to confirm reel specifications. Confirm RoHS compliance status through current manufacturer declarations. Ensure the component meets all environmental requirements for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high gain and broadband performance across the 470 to 860 MHz spectrum. Consider its capability to handle strong mismatches and ruggedness for demanding RF environments. Evaluate thermal management requirements based on the specified junction temperature limits and thermal resistance characteristics.

Part Context

This part belongs to the MRF6VP3450H series of RF Power LDMOS transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The series includes variants such as HR6, HR5, HSR6, and HSR5, sharing core electrical characteristics while differing in packaging and reel configurations.