MRF7P20040HR5

Overview

The MRF7P20040HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1800 and 2200 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and operates at junction temperatures up to 225 °C. In single-carrier W-CDMA tests at 2025 MHz, it delivers 10 Watts average output power with 18.2 dB gain and 42.6% drain efficiency. The device handles 5:1 VSWR and features integrated ESD protection.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Designed specifically for digital predistortion error correction systems

Applications

• CDMA base station amplifiers
• W-CDMA cellular base stations
• Digital predistortion linearization circuits
• Class AB and Class C RF power amplification

Procurement Notes

Verify the specific suffix against official documentation before ordering. The R3 suffix indicates a 250-unit reel configuration, while the R5 suffix denotes a 50-unit tape and reel option. Confirm that the supplier provides the exact package variant required for your assembly process. Ensure compliance with RoHS standards as specified in the datasheet.

Selection Notes

Select this component for high-linearity requirements in cellular infrastructure. It offers symmetrical Doherty configuration testing and guaranteed output power capability. Consider thermal management capabilities when designing heat sinks, noting the low thermal resistance values provided for both carrier and peaking amplifier configurations.

Part Context

This part belongs to the MRF7P series of RF power transistors manufactured by Freescale Semiconductor. These devices utilize lateral DMOS technology to provide robust performance in demanding wireless communication environments. The series is engineered to replace vacuum tube technologies with solid-state reliability.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter overlaps before replacing existing designs. Check for updated manufacturing sources if the original producer has undergone corporate restructuring.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device support internal matching?

Yes, the device is internally matched on both the input and output ports.

What is the typical power gain at 2025 MHz?

The typical power gain is 18.2 dB under standard test conditions.