MRF7P20040HSR3

MRF7P20040HSR3

$39.91
  • Description:RF MOSFET LDMOS 32V NI780
  • Series:-

SKU:1a2f02a516ee Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.8GHz ~ 2.2GHz
  • Gain:18.2dB
  • Voltage - Test:32 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S-4
  • Supplier Device Package:NI-780S-4
  • Configuration:Dual

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MRF7P20040HSR3

Overview

The MRF7P20040HSR3 is an N-channel enhancement-mode lateral DMOS RF power transistor manufactured by Freescale Semiconductor, now part of NXP Semiconductors. Designed for S-band applications, this device operates within a frequency range of 1.8 GHz to 2.2 GHz. It features a maximum drain-source breakdown voltage of 65 V and is housed in the NI-780S-4 flange mount package. The component is specified for high-power RF amplification tasks requiring robust thermal performance and reliable operation in demanding environments.

Feature Summary

  • N-channel enhancement-mode lateral DMOS construction
  • Optimized for S-band RF power amplification
  • Flange mount package design for efficient heat dissipation

Applications

  • S-band RF power amplifiers
  • Military communication systems
  • Base station transmitter modules

Procurement Notes

Verify the manufacturer designation carefully, as Freescale Semiconductor has been acquired by NXP Semiconductors. Ensure that the ordering suffix matches the specific package variant required for your thermal and mechanical constraints. Confirm RoHS compliance status and lead-free characteristics through official distributor channels or updated datasheets provided by NXP to guarantee regulatory adherence and supply chain authenticity.

Selection Notes

Select this component for S-band applications requiring high power output with a 65 V drain-source rating. Consider the NI-780S-4 package for its thermal management capabilities in high-power density designs. Evaluate the 1.8 GHz to 2.2 GHz frequency range against system requirements. Ensure compatibility with existing biasing networks and impedance matching circuits designed for LDMOS technology.

Part Context

This device belongs to the MRF series of RF power transistors from Freescale Semiconductor. The series is known for providing high linearity and efficiency in RF applications. As part of NXP's portfolio following the acquisition, these components continue to support critical infrastructure and defense electronics. The MRF7P20040HSR3 specifically targets S-band frequencies, offering a balance of power handling and bandwidth for professional radio frequency systems.

Replacement Considerations

Check NXP's official substitution guide for direct replacements. Verify pinout compatibility and thermal resistance values when considering alternatives. Ensure that any substitute component meets the same S-band performance criteria and voltage ratings.

MRF7P20040HSR3MRF7P20040HSR3
$39.91
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