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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.51GHz
- Gain：19.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：600 mA
- Power - Output：23W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
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Overview
The MRF7S15100HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1470 and 1510 MHz. It supports Class AB and Class C modulation types with a drain-source voltage of 65 Vdc and gate-source voltage range of -6.0 to +10 Vdc. The device delivers 23 Watts average output power at 1507.5 MHz with 19.5 dB gain and 32% efficiency under single-carrier W-CDMA conditions. It handles 10:1 VSWR at 32 Vdc and features integrated ESD protection.
Feature Summary
- Optimized for Doherty amplifier applications
- Internally matched input and output circuits
- Integrated electrostatic discharge protection
- Extended negative gate-source voltage range
Applications
- CDMA base station amplifiers
- Class AB cellular base station modulations
- Class C cellular base station modulations
- Doherty amplifier configurations
Procurement Notes
Verify the specific suffix HR5 against official documentation, as datasheets reference HR3 and HSR3 variants. Confirm RoHS compliance status and package style (NI-780 or NI-780S) prior to ordering. Ensure design parameters align with the manufacturer's test fixture requirements for accurate performance validation.
Selection Notes
Select this component for wideband RF power amplification in cellular infrastructure. Evaluate thermal management capabilities given the junction-to-case resistance values. Consider the internal matching network to simplify circuit design. Verify compatibility with required drive levels and biasing constraints for optimal linearity and efficiency.
Part Context
This part belongs to the MRF7S series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor, now NXP USA Inc. The series utilizes LDMOS technology optimized for high-power wireless communication base stations. The device represents a specialized solution for demanding linear amplification tasks in mobile telecommunications networks.
Replacement Considerations
MRF7S15100HR3
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage rating is 65 Vdc.
Does the device include internal matching networks?
Yes, the device is internally matched on both the input and output ports.
What is the typical power gain at 1507.5 MHz?
The typical power gain is 19.5 dB under standard single-carrier W-CDMA test conditions.
