MRF7S15100HSR3

Overview

The MRF7S15100HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1470 and 1510 MHz. It delivers 23 Watts average output power at 28 Volts with a typical drain efficiency of 32% and power gain of 19.5 dB. The device withstands 10:1 VSWR at 32 Vdc and 100 Watts CW. Maximum ratings include a Drain-Source Voltage of +65 Vdc, Gate-Source Voltage range of -6.0 to +10 Vdc, and an Operating Junction Temperature up to 225 °C.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output networks
• Integrated electrostatic discharge protection
• Extended negative gate-source voltage range

Applications

• CDMA base station amplifiers
• Class AB cellular base station modulations
• Class C cellular base station modulations

Procurement Notes

Verify the specific package variant required for the design. The MRF7S15100HR3 utilizes Case 465-06 (NI-780), while the MRF7S15100HSR3 uses Case 465A-06 (NI-780S). Confirm that the selected housing matches the thermal interface and mounting specifications of the target application before finalizing procurement.

Selection Notes

Select this component for wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz in certain contexts, though specifically rated for 1470-1510 MHz here. Ensure the bias circuit supports the specified quiescent current of 600 mA. Verify that the system can handle the high junction temperature limits and utilize the provided series equivalent large-signal impedance parameters for accurate matching network design.

Part Context

This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor product line, now part of NXP Semiconductors. It is characterized by series equivalent large-signal impedance parameters and is production tested for guaranteed output power capability. The device is RoHS compliant and supplied in tape and reel packaging.

Replacement Considerations

MRF7S15100HR3

FAQ

What is the maximum continuous wave output power?

The device is capable of handling 100 Watts CW output power at 32 Vdc and 1490 MHz.

How does the device perform under high VSWR conditions?

It is capable of handling 10:1 VSWR at 32 Vdc and 1490 MHz with 100 Watts CW output power.

What is the typical adjacent channel power ratio?

The typical ACPR is -38 dBc measured in a 3.84 MHz channel bandwidth at a ±5 MHz offset.