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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.6GHz ~ 1.66GHz
- Gain：19.7dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.5 A
- Power - Output：32W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
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Overview
The MRF7S16150HR3 is an N-channel enhancement-mode lateral MOSFET designed for WiMAX base station applications up to 1700 MHz. It operates at a drain-source voltage of 65 Vdc and supports a maximum operating junction temperature of 225 °C. At 1600-1660 MHz with 28 V supply, it delivers 32 W average output power with 19.7 dB gain and 25.4% efficiency. The device handles 150 W CW at the 1 dB compression point and withstands 10:1 VSWR at 1630 MHz.
Feature Summary
- Internally matched input and output networks for simplified circuit integration
- Integrated electrostatic discharge protection mechanisms
- Extended negative gate-source voltage range optimized for Class C operation
Applications
- WiMAX base station amplifiers
- WiBro systems
- Broadband Wireless Access (BWA)
- OFDM multicarrier Class AB and Class C amplifier designs
Procurement Notes
Verify the specific ordering suffix against current manufacturer documentation to confirm packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for wideband RF power amplification requiring high linearity and robustness. Verify that the application environment accommodates the specified maximum case operating temperature of 150 °C. Ensure biasing circuits support the required quiescent current and gate voltage ranges for optimal performance in Class AB or C modes.
Part Context
This part belongs to the MRF7S series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor. These devices are engineered specifically for demanding wireless communication infrastructure. The NI-780 package provides a standardized form factor for mounting on printed circuit boards used in RF test fixtures and production environments.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing generic specifications is insufficient; only officially confirmed substitute part numbers should be considered for direct replacement without redesign.
FAQ
What is the maximum continuous wave output power capability?
The device is capable of handling 150 Watts CW output power at the 1 dB compression point.
How does the device handle impedance mismatches?
It is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) at 32 Vdc and 1630 MHz with 150 Watts CW output power.
What is the typical power gain at 1600 MHz?
The typical power gain is 19.7 dB when operating at 1600 MHz with 32 Watts average output power.
