MRF7S16150HSR3

Overview

The MRF7S16150HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for WiMAX base station applications up to 1700 MHz. It operates at a drain-source voltage of 65 Vdc and supports a maximum operating junction temperature of 225 °C. The device delivers 32 Watts average output power with 19.7 dB gain and 25.4% efficiency at 1600/1660 MHz using 802.16d signals. It handles 150 Watts CW at the 1 dB compression point and withstands 10:1 VSWR at 32 Vdc. The component features integrated ESD protection and is supplied in tape and reel packaging.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation

Applications

• WiMAX base station amplifiers
• WiBro system implementations
• BWA broadband amplifier stages
• OFDM multicarrier Class AB and Class C power amplification

Procurement Notes

Verify the specific ordering suffix R3 confirms the 250-unit reel quantity on 56 mm, 13 inch reels. Confirm RoHS compliance status through official documentation. Ensure the NI-780S package style matches the required thermal interface specifications for the target application board layout.

Selection Notes

Select this component for designs requiring high linearity with OFDM signals like 802.16d. Evaluate thermal management capabilities given the 225 °C junction limit. Consider the internal matching to reduce external component count. Verify bias requirements align with the specified 28 Vdc operating voltage and quiescent current parameters.

Part Context

This lateral N-channel RF power MOSFET belongs to the MRF7S series developed by Freescale Semiconductor, now NXP Semiconductors. It utilizes silicon technology within the NI-780S surface-mount package. The device targets wireless infrastructure markets requiring robust performance in wideband communication standards.

Replacement Considerations

Consult official substitution lists for equivalent lateral MOSFETs. Verify pinout compatibility and thermal resistance values before replacing.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Does the device include internal matching?

Yes, the MRF7S16150HSR3 is internally matched on both input and output ports.

What is the typical power gain at 1600 MHz?

The typical power gain is 19.7 dB under standard WiMAX test conditions.