ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.88GHz
- Gain：17dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.1 A
- Power - Output：125W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
Download product information
Overview
The MRF7S18125AHR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulation schemes. Typical performance at VDD = 28 Volts, IDQ = 1100 mA, and f = 1880 MHz includes a power gain of 17 dB and drain efficiency of 55% with 125 Watts CW output. For GSM EDGE, it delivers 57 Watts average output with 38% efficiency and 1.75% rms EVM. The device features internal input and output matching networks.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- Characterized with series equivalent large-signal impedance parameters
Applications
- GSM base station amplifiers
- GSM EDGE base station amplifiers
- Class AB cellular base station modulations
- Class C cellular base station modulations
Procurement Notes
Verify the specific ordering suffix to confirm the reel packaging format. The R3 suffix indicates units are supplied in a 56 mm, 13-inch tape and reel containing 250 units. Ensure the component matches the required package style (Case 465-06 or Case 465A-06) for your PCB layout. Confirm RoHS compliance status during procurement.
Selection Notes
Select this component for wideband RF power amplification within the 1805 MHz to 1880 MHz frequency range. It requires a 28 Vdc supply voltage and is optimized for high linearity and efficiency in digital cellular environments. Designers must account for its thermal characteristics, specifically the junction-to-case resistance, to maintain safe operating temperatures under continuous wave conditions.
Part Context
This part belongs to the Freescale Semiconductor (now NXP) LDMOS family, originally developed for wireless infrastructure. It utilizes advanced lateral MOSFET technology to deliver high power density. The device was engineered to replace older discrete transistor solutions by integrating matching networks directly onto the die, simplifying amplifier design and reducing board space requirements.
Replacement Considerations
MRF7S18125AHSR3
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 225 °C.
Does the device require external matching networks?
No, the device is internally matched on both the input and output sides for ease of use.
What is the typical drain efficiency at 125 Watts CW?
The typical drain efficiency is 55% when operating at 125 Watts CW with a 28 Volt supply.
