MRF7S18125AHSR5

Overview

The MRF7S18125AHSR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulation schemes. Typical performance at VDD = 28 Volts, IDQ = 1100 mA, and f = 1880 MHz includes a power gain of 17 dB and drain efficiency of 55% with 125 Watts CW output. For GSM EDGE, it delivers 57 Watts average output with 38% efficiency and 1.75% rms EVM. The device withstands 5:1 VSWR and features a maximum drain-source voltage of 65 Vdc.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Characterized using series equivalent large-signal impedance parameters
• Capable of handling high standing wave ratios under specified conditions

Applications

• GSM base station power amplification
• GSM EDGE base station power amplification
• Class AB cellular base station modulations
• Class C cellular base station modulations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance requirements for your target market. Ensure thermal management solutions align with the junction-to-case thermal resistance specifications provided in the datasheet. Validate that the gate threshold voltage and quiescent biasing parameters match your amplifier design constraints before finalizing procurement.

Selection Notes

Select this component for designs requiring high power output within the 1800-2000 MHz frequency range. Consider the internal matching capabilities if minimizing external passive components is a priority. Evaluate the thermal characteristics carefully, as continuous operation at maximum temperatures affects mean time to failure. Verify that the 65 Vdc drain-source voltage rating provides sufficient headroom for your supply voltage and transient conditions.

Part Context

This device belongs to the RF Power Field Effect Transistors category from Freescale Semiconductor, now part of NXP Semiconductors. It utilizes lateral MOSFET technology optimized for linear amplification in wireless communication infrastructure. The product line targets the demanding requirements of second-generation cellular networks, providing robust performance in high-volume base station deployments.

Replacement Considerations

Consult official replacement guides or cross-reference lists for verified substitute part numbers. Do not assume pin compatibility or electrical equivalence with other models without explicit manufacturer confirmation.