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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.93GHz
- Gain：16.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.1 A
- Power - Output：125W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
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Overview
The MRF7S18125BHR5 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulations with a drain-source voltage of up to 65 Vdc and an operating voltage of 32 Vdc. Typical performance at 28 Volts includes 125 Watts CW output power with 16.5 dB gain and 55% efficiency, or 57 Watts average power for EDGE modulation with 17 dB gain and 39% efficiency. The device features internal input and output matching, integrated ESD protection, and RoHS compliance.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- RoHS compliant
Applications
- GSM base station applications
- GSM EDGE base station applications
Procurement Notes
Verify the exact ordering suffix against official documentation to confirm packaging specifications. Confirm that the component meets all required environmental standards and regulatory compliance criteria before integration into final designs.
Selection Notes
Evaluate thermal management requirements based on junction-to-case resistance values under specific operating conditions. Ensure biasing circuits support the specified gate threshold and quiescent voltage ranges for optimal linearity and efficiency in cellular base station architectures.
Part Context
This component belongs to the RF Power LDMOS transistor family from Freescale Semiconductor (now NXP). These devices are engineered for high-power radio frequency amplification in wireless communication infrastructure, providing robust performance in demanding cellular network environments.
Replacement Considerations
Consult official datasheets for cross-reference information. Verify pinout compatibility, impedance matching networks, and thermal characteristics when substituting with other RF power transistors.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) rating is -0.5 to +65 Vdc.
Does the device include internal matching networks?
Yes, the MRF7S18125BHR5 is internally matched on both the input and output ports.
What ESD protection levels does the device meet?
It meets Human Body Model Class 1B, Machine Model Class A, and Charge Device Model Class IV minimum standards.
